VISHAY SI6562CDQ-T1-GE3 Dual MOSFET, N and P Channel, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV Test Equipment Accessories Impedance: 8 Ohm

Impedance: 8 Ohm

of Poles 3 Pole Load Current Inductive 9A Contact Configuration 3NO / 1NO Switching Power AC3 4kW Switching Power AC1 - Other details

Proven strength and reliability

50° Field of View

compact tripod has a maximum height of 5

VISHAY SI6562CDQ-T1-GE3 Dual MOSFET, N and P Channel, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV Test Equipment Accessories Impedance: 8 OhmThis is a Dual MOSFET, N and P Channel, 6. 7 A, 20 V, 0. 18 ohm, 4. 5 V, 600 mV product from VISHAY with the model number SI6562CDQ T1 GE3Product details Transistor Polarity N and P Channel Continuous Drain Current Id 6. 7A Drain Source Voltage Vds 20V On Resistance Rds(on) 0. 18ohm Rds(on) Test Voltage Vgs 4. 5V Threshold Voltage Vgs 600mV Power Dissipation Pd 1. 6W Transistor Case Style TSSOP No. of Pins 8Pins Operating Temperature Max 150C Product